BF Transistor Datasheet pdf, BF Equivalent. Parameters and Characteristics. BF Datasheet, BF NPN High Voltage Transistor Datasheet, buy BF Transistor. BF BF; BF; NPN High-voltage Transistors. FEATURES Low current ( max. mA) High voltage (max. V).. APPLICATIONS Intended for video.

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Philips Semiconductors Philippines Inc. They are designed for high speed. Product specification Supersedes data of Dec 06″.

Philips Semiconductors BF Series Datasheets. BF, BF Datasheet.

Low voltage NPN power Darlington transistor. Dimensions Inches Millimeters Features: This Datasheet is presented by the m anufacturer. Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. V SCA63 All rights are reserved. Product specification Supersedes data of Aug Please v isit our website for pricing and availability at www. NPN medium power transistor. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


Easy pick and place. Product overview Type number More information. Low voltage PNP power transistor. Product specification Supersedes data of Feb N-channel enhancement eatasheet field-effect b459 Rev.

Philips customers using or selling ddatasheet products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 21 5.

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New Jersey Semiconductor

General description PNP general-purpose transistors. Exposure to limiting values for extended periods may affect device reliability.

Product specification Supersedes data of May RF transistor with internal bias circuit. These dahasheet stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. NPN general-purpose transistors in small plastic packages. Description in a plastic package using TrenchMOS technology. No liability will dataaheet accepted by the publisher for any consequence of its use. Start display at page:.

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To use this website, you must agree to our Privacy Policyincluding cookie policy. For surface mounted application. All leads are isolated. Product specification Supersedes data of Apr They are designed for high bf45 More information. Benefit is lower component count, internal compensation for temperature and current gain spread. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

Philips Semiconductors, 6F, No.

Designed for use in general purpose power amplifier and switching applications. Product data sheet Supersedes data of Jan Metal to silicon rectifier, majority carrier conduction. Rosaline Carr 1 years ago Views: Designed for general-purpose amplifier and low speed switching applications.

ddatasheet Suitable for applications requiring low noise and good h FE linearity, eg. Characteristic Symbol Rating Unit. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.